EDS Distinguished Lecturer Mini-Colloquium
GaN HEMT Technology
The "Pol-HEMT" project (http://www.polhemt.ite.waw.pl/en/home.html) coordinated by Instytut Technologii Elektronowej (ITE) aims at developing a new type of microwave S-band HEMT transistor based on AlGaN/GaN structures grown on bulk semi-insulating GaN substrates.
To establish a platform for exchange of experience in the area of GaN HEMT technology, modeling and applications, to share Pol-HEMT team achievements with an international community, and to attract potential R&D partners an IEEE EDS Distinguished Lecturer Mini-Colloquium on GaN HEMT technology will be held in Lodz, Poland, June 22, 2016.
The one-day event will consist of a series of the lectures related to GaN HEMT technology, TCAD/EDA modeling and IC applications. The lectures will be given by recognized experts in this area. Three IEEE EDS Distinguished Lecturers have already confirmed their participation, namely
- Prof. Michael Shur, Rensselaer Polytechnic, USA;
- Dr. Muhammad Nawaz, ABB Corporate Research, Sweden;
- Dr. Władysław Grabiński, GMC Suisse.
In addition, other lectures will be delivered by international and Polish experts. A complete program of the MQ seminar will be announced through IEEE EDS communication channels and thru MIXDES conference website, soon.
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Cross-section and optical microscopy image of 2-gate AlGaN/GaN HEMT fabricated under Pol‑HEMT project (after: A. Taube et al., Phys. Status Solidi A 212, No. 5, 1162–1169 (2015)
