Characteristics Improvement of 4H-SiC Using the CIBH Structure for 10KV BA-JTE Diode

Y. Jia, P. Li, D. Hu (BJUT, China), F. Yang, Y. Zha (Global Energy Interconnection Research Inst., China)

Abstract—The switching losses and the softness are the key characteristics to evaluate the quality of the ultra voltage power diodes, especially for high frequency application. In this paper, we applied the Controlled Injection of Backside Holes (CIBH) structure to the 10kV SiC diode based on TCAD, by which, the switching characteristics of the diode is significantly improved compared with conventional diode. In addition, the termination of BA-JTE guarantee the breakdown voltage of the diode. Simulated results indicate that the area ratio and doping concentration of the CIBH are the most important parameters for the optimization of switching characteristics.