Simulation Framework for Barrier Lowering in Schottky Barrier MOSFETs

M. Schwarz (Robert Bosch GmbH, Germany), J.P. Snyder (JCap, LLC, USA), T. Krauss, U. Schwalke (Tech. Univ. Darmstadt, Germany), L.E. Calvet (Univ. Paris-Sud, France), A. Kloes (Tech. Hochschule Mittelhessen, Germany)

In this paper we present a simulation framework to account for the Schottky barrier lowering models in SBMOSFETs within the Synopsys TCAD Sentaurus tool-chain. The improved Schottky barrier lowering model for field emission is considered. A strategy to extract the different current components and thus predict accurately the on- and off-current regions are adressed.