A Test Structure for Characteriation of the Shallow Piezoresistor-based Strain Sensors

H. Hara, G. Głuszko, D. Tomaszewski (Institute of Electron Techn., Poland)

A process for manufacturing of the p-type piezoresistor-based monolithic strain sensors is described. The process variants regarding resistor doping techniques and the sensor design are discussed. The offset measurement results are reported. For a detailed characterization of the piezoresistive sensors by the electrical measurements a dedicated test structure has been proposed. Van der Pauw and Kelvin structures have been included in the structure for the contact resistance, sheet resistance, diffusion line narrowing extraction. Additionally the test devices: MOS capacitors and p-n diodes have been included for the process assessment. The test structure and the parameter extraction methodology are reported in the paper.