Investigation of CMOS Multiplexor Single-Event Latch-up Sensitivity at Low Temperature on PICO-4 Pulsed Laser Facility

R. Mozhaev, V. Lukashin, D. Ukolov, A. Pechenkin (National Research Nuclear Univ. "MEPHI", Russia)

The paper presents the data obtained during the study of CMOS multiplexors single-event effects (SEE) sensitivity at ion accelerator and at laser SEE-simulation facility. A comparison of single-event latch-up (SEL) rate at normal and low temperature is made.