Conference paper

Compact Modeling of Channel-Resistance Effects in Reconfigurable Field-Effect Transistors

C. Römer (TH Mittelhessen - Univ. of Applied Sciences, Germany and Universitat Rovira i Virgili, Spain), G. Darbandy, M. Schwarz (TH Mittelhessen - Univ. of Applied Sciences, Germany), J. Trommer (NaMLab gGmbH, Germany), M. Simon (NaMLab gGmbH and TU Dresden, Germany), A. Heinzig (TU Dresden, Germany), T. Mikolajick (NaMLab gGmbH and TU Dresden, Germany), W. Weber (TU Wien, Austria), B. Iñíguez (Univ. Rovira i Virgili, Spain), A. Kloes (TH Mittelhessen - Univ. of Applied Sciences, Germany)

Reconfigurable field-effect transistors come with an additional gate contact, which leads to challenges for compact modeling. In this work, a closed-form and physics-based DC model is derived for those devices, which combines the injection current over the Schottky barriers with the resistance-effects of partially ungated device channel segments or long channel devices. The model verification is done by comparing the results to TCAD simulations and measurements.

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Receipt of papers:

March 15th, 2022

Notification of acceptance:

April 30th, 2022

Registration opening:

May 12th, 2022

Final paper versions:

May 20th, 2022