Comprehensive Design-oriented FDSOI EKV Model

H.-C. Han, A. D'Amico, C. Enz (EPFL, Switzerland)

The work presents the comprehensive design-oriented EKV model for FDSOI technologies, including the back-gate effect. Despite its simplicity, the model correctly captures not only the dependency of the threshold voltage versus the back-gate, but also the changes in the slope factor and mobility. This results in a normalized transconductance efficiency that becomes independent of the back-gate voltage over a wide range. The model is validated thanks to the use of the Python-based automated parameter extraction tool on an advanced FDSOI technology.