Conference paper

Comprehensive Design-oriented FDSOI EKV Model

H.-C. Han, A. D'Amico, C. Enz (EPFL, Switzerland)

The work presents the comprehensive design-oriented EKV model for FDSOI technologies, including the back-gate effect. Despite its simplicity, the model correctly captures not only the dependency of the threshold voltage versus the back-gate, but also the changes in the slope factor and mobility. This results in a normalized transconductance efficiency that becomes independent of the back-gate voltage over a wide range. The model is validated thanks to the use of the Python-based automated parameter extraction tool on an advanced FDSOI technology.

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Receipt of papers:

March 15th, 2022

Notification of acceptance:

April 30th, 2022

Registration opening:

May 12th, 2022

Final paper versions:

May 20th, 2022