Analysis and 2D Analytical Modeling of III-V Schottky Barrier Double-Gate MOSFETs

M. Schwarz (-, Germany), A. Kloes (Tech. Hochschule Mittelhessen, Germany)

In this paper we present a model for III-V Schottky barrier (Double-Gate) MOSFET devices including two dimensional effects on the main current transport mechanisms. A detailed way of the two-dimensional modeling approach with the primary current components is given. A comparison and verification with TCAD FEM simulation data is done with the model current equations.