High-temperature Properties of Schottky Diodes Made of Silicon Carbide

K. Górecki, D. Bisewski, J. Zarębski (Gdynia Maritime Univ., Poland), R. Kisiel, M. Myśliwiec (Warsaw Univ. of Techn., Poland)

This paper refers to properties of silicon carbide Schottky diodes at high values of their internal temperature. The investigated diode were elaborated at Warsaw University of Technology. Characteristics of this diode was measured at different cooling conditions in wide range of dissipated power. At each operating point the value of internal temperature of the investigated diode was measured with the use of impulse electrical method. On the basis of obtained results of measurements the thermal properties of the considered diode was discussed, as well as the possibility of using such a construction of the diode at very high values of its internal temperature (up to 500oC) was considered.