Conference paper

FOSS as an Efficient Tool for Extraction of MOSFET Compact Model Parameters

D. Tomaszewski, G. Głuszko (Institute of Electron Techn., Poland), V. Kuznetsov (Bauman Moscow State Tech. Univ., Russia), M. Brinson (London Metropolitan Univ., UK), W. Grabinski (GMC Research, Switzerland)

A GNU Octave – based application for device-level compact model evaluation and parameter extraction has been developed. The applications main features are as follows: experimental I-V data importing, generating input data for different circuit simulation programs, running the simulation program to calculate I-V characteristics of the specified models, calculating model misfit and its sensitivity to selected parameter variation, and the comparison of experimental and simulated characteristics. Measured I-V data stored by different measurement systems are accepted. Circuit simulations may be done with Ngspice, Qucs and LTSpiceIV ©. Selected aspects of the application are presented and discussed.

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Receipt of papers:

March 15th, 2024

Notification of acceptance:

April 30th, 2024

Registration opening:

May 1st, 2024

Final paper versions:

May 15th, 2024