IP Release and Cross-Foundry Design Migration for 3D-MRAM Technology

Q. Zhu (International Technological Univ., USA)

Three-dimensional Magnetoresistive Random Access Memory (3D-MRAM) is an emerging non-volatile memory technology that achieves high density by vertically stacking multiple Magnetic Tunnel Junction (MTJ) layers. This paper presents a practical enablement methodology for 3D-MRAM, focusing on two key aspects: the quality-driven IP release flow and the automated layout migration approach for advanced CMOS process technologies. The proposed migration methodology integrates drawing-layer mapping, layer synthesis, device remapping, and iterative DRC/LVS verification to ensure design correctness in the target technology. The presented IP release and migration flows improve design productivity, reduce manual effort, and provide a scalable framework applicable to a broad range of semiconductor IP development projects.