Reliability-Oriented TCAD Modelling of Low-Voltage Schottky p-GaN Gate Power HEMT Using CRSS(VDS) Curve as a Relevant Trapping Diagnosis

N. Essobai Meftah (LAAS-CNRS, LAPLACE Université de Toulouse, CNRS, France), D. Trémouilles (LAAS-CNRS, France), F. Richardeau (LAPLACE, Université de Toulouse, CNRS, France, France)

P-GaN gate HEMTs are highly attractive for power applications but exhibit complex reliability issues related to trapping effects and high-field stresses. Accurate investigation of these mechanisms requires a calibrated physical model able to reproduce the electrical behavior of the device. In this work, a TCAD fitting methodology for a commercial p-GaN HEMT is proposed. Unlike purely automated optimization techniques, the approach relies on a semi-empirical, experience-driven parameter adjustment strategy to achieve a physically consistent parameter set. Using the fitted model, a study of trapping parameters highlights the relevance of the capacitive marker CRSS(VDS) for identifying the localization, nature, and density of active traps in hard-switching operation and reverse conduction operation conditions from experimental results.