Study of Nanowire Characteristics of a Junctionless Transistor Depending on the Gate Length

G. Angelov, R. Rusev, I. Ruskova, E. Gieva, D. Nikolov, M. Spasova, M. Hristov, R. Radonov (Tech. Univ. Sofia, Bulgaria)

Channel length influence on the nanowire parameters and characteristics at different gate voltages for applications in junctionless transistors (JLTs) are analyzed. The density-gradient effective mass tensor of the charge carriers is studied. The results obtained are used to indicate a compromise between performance and minimum dimensions for JLT sensor applications.