Variability-Aware Characterization of Current Mirrors Based on Organic Thin-Film Transistors on Flexible Substrates

A. Nikolaou, J. Leise, J. Pruefer (Tech. Hochschule Mittelhessen - Univ. of Applied Sciences, Germany and Univ. Rovira i Virgili, Spain), U. Zschieschang, H. Klauk (Max Planck Inst. for Solid State Research, Germany), G. Darbandy (Tech. Hochschule Mittelhessen - Univ. of Applied Sciences, Germany), B. Iniguez (Univ. Rovira i Virgili, Spain), A. Kloes (Tech. Hochschule Mittelhessen - Univ. of Applied Sciences, Germany)

The variability of the electrical characteristics of current-mirror circuits based on organic thin-film transistors is analyzed using experimental data obtained from a large number of discrete transistors and from a large number of current mirrors fabricated on a flexible polymeric substrate. Depending on the channel length of the transistors (5 µm or 2 µm) and on whether the two transistors comprising the current mirror are biased simultaneously or separately, the drain-current mismatch of the current mirrors is as small as 1% and as large as 25%.