Compact Analytical Model of Nanowire Junctionless ISFET

A. Yesayan (Inst. of Radiophysics and Electronics, Armenia), J.-M. Sallese (Swiss Federal Inst. of Techn., Switzerland)

In this work, we present a simple compact model for junctionless ion-sensitive FETs (JL ISFET) operating in depletion. The sensitivity dependence on nanowire physical and geometrical parameters are discussed as guidelines for the device optimization. The model validation with COMSOL Multiphysics simulations is presented.