On the Electro-Thermal 2D FEM Parametric Analysis of SiC Vertical MOSFET Including Gate-Oxide Charge-Trapping Thermal Dependency. Application for Fast Transient Extreme Short-Circuit Operation

T. Cazimajou, E. Sarraute, F. Richardeau (LAPLACE, Univ. de Toulouse, CNRS, INPT, UPS. Toulouse, France)

This article proposes a generic and complete electro-thermal 4H-SiC physical Mosfet model. Static and transient in hard short-circuit operation behaviors are successfully performed using 2D ComsolTM software. Influence of fixed charges and traps at the 4H-SiC/SiO2 interface has been highlighted, both for static and transient. An additional mobility coefficient through Arora's mobility model was then suggested to fully fit the transient model in hard short-circuit operation.