A Generic Approach for Compact Modeling of Variability and Low-Frequency Noise in Organic Thin-Film Transistors

A. Kloes, G. Darbandy (THM Univ. of Applied Sciences, Germany), B. Iñíguez (Univ. Rovira i Virgili, Spain), A. Nikolaou (THM Univ. of Applied Sciences, Germany and Univ. Rovira i Virgili, Spain)

For organic thin-film transistors, a generic approach for modeling the drain-current variability and low-frequency noise due to carrier-number and correlated mobility fluctuations is presented. Both effects are dominated mainly by grain- boundary traps and lead to similar analytical expressions, which are ready for compact model implementation. Additionally, equa- tions for percolative mobility fluctuation are presented, which becomes dominant for below threshold operation. Results of the model are shown to be in good agreement with measurements performed on organic thin-film transistors.