Review of Commercial SiC MOSFET Models: Topologies and Equations

A. Stefanskyi, Ł. Starzak, A. Napieralski (Lodz Univ. of Techn., Poland)

SPICE models of silicon carbide power MOSFETs provided by manufacturers currently present on the market have been compared. Model subcircuit topologies have been identified and described. Principal equations have been extracted and related to common MOSFET models.