Review of Commercial SiC MOSFET Models: Validity and Accuracy

A. Stefanskyi, Ł. Starzak, A. Napieralski (Lodz Univ. of Techn., Poland)

SPICE models of four silicon carbide power MOSFETs provided by present commercial manufacturers have been experimentally validated and their accuracy has been assessed. The analysis has covered forward and reverse static output characteristics as well as the on-state drain-to-source resistance.