A Dual Feedback Wideband Differential Low Noise Amplifier in 130 nm CMOS Process

A. Zokaei, K. El-Sankary (Dalhousie Univ., Canada), D. Trukhachev, A. Amirabadi (Dalhousie Univ., Canada and South Tehran Branch Azad Univ., Iran)

In this paper a fully differential wideband Low Noise Amplifier (LNA) is presented which utilizes positive-negative feedback to achieve a high gain and low noise performance. CG-CS structure is used as a negative feedback while the positive feedback is due to the other differential side connection. Based on this idea, the LNA overcomes the trade-off between power and noise matching without degrading the stability. The LNA is supposed to cover approximately 2.5 GHz bandwidth from about 3.5~6 GHz. It has a maximum power gain of about 13.5 dB, input return loss (S11) of less than -10 dB and a minimum Noise Figure (NF) of about 3.5 dB. The layout of the LNA consumes about 1.001 µm2 of chip area and it dissipates 16 mW.