A High-resolution, Wide-range, Radiation-hard Clock Phase-shifter in a 65 nm CMOS Technology

S. Kulis (CERN, Switzerland), D. Yang (Southern Methodist Univ., USA and Univ. of Science and Techn. of China, China), D. Ghong (Southern Methodist Univ., USA), J. Fonseca (CERN, Switzerland), S. Biereigel (CERN, Switzerland, Katholieke Univ. Leuven, Belgium and Brandenburg Univ. of Techn., Germany), J. Ye (Southern Methodist Univ., USA), P. Moreira (CERN, Switzerland)

AbstractThe design and characterization results of a high-resolution phase-shifter are presented. The phase-shifter is designed with radiation hardening techniques and fabricated in 65~nm CMOS technology. The phase-shifter circuit can produce several output frequencies (40, 80, 160, 320, 640 or 1280~MHz) with an adjustable phase (48.4~ps resolution). It has been fully characterized displaying INL$<$0.61~LSB and DNL$<$0.44~LSB with the power consumption, depending on the output frequency, staying below 8~$\mu$W/MHz.