Forward and Reverse Operation of Enclosed-gate MOSFETs and Sensitivity to High Total Ionizing Dose

A. Nikolaou, L. Chevas, A. Papadopoulou, N. Makris, M. Bucher (Tech. Univ. Crete, Greece), G. Borghello, F. Faccio (CERN, Switzerland)

Frond-end electronics at the High Luminosity-Large Hadron Collider (HL-LHC) at CERN, will be exposed to ten-fold radiation doses. The use of enclosed gate (EG) MOSFETs of 65 nm Bulk CMOS process, is considered to be a viable solution in order to suppress performance degradation effects that occur after high TID exposure. The present paper presents a detailed analysis of the functionality of EG MOSFETs operating under high TID, taking into account specific layout characteristics.