Impact of Dynamic Trapping on High Frequency Organic Field-Effect Transistors

M. Mueller, S. Donnhäuser, S. Mothes, A. Pacheco-Sanchez, K. Haase, S. C. B Mannsfeld, M. Claus (Tech. Univ. Dresden, Germany)

Many emerging organic semiconductor devices suffer from hysteresis effects caused by traps. The impact of such traps on AC device performance has not been investigated yet. In this paper, high-frequency non-quasi-static effects related to dynamic trapping based on a theoretical framework, TCAD simulations, and experimental data have been studied. In contrast to previous studies, the focus of this paper is the OFET's high-frequency performance and not the characterization of the traps.