Conference paper

Recessed and P-GaN Regrowth Gate Development for Normally-off AlGaN/GaN HEMTs

C. Haloui (LAAS-CNRS and CEA-Tech, France), G. Toulon (EXAGAN, France), J. Tasselli (LAAS-CNRS, France), Y. Cordier, E. Frayssinet (CRHEA-CNRS, France), K. Isoird, F. Morancho (LAAS-CNRS, France), M. Gavelle (CEA-Tech, France)

A new normally-off AlGaN/GaN HEMT structure is proposed. The regrowth of a P-GaN layer on the AlGaN/GaN heterostructure after the gate recess allows the achievement of the enhancement mode. A shift in the threshold voltage to positive values has been proved through simulation results. A precise control of the etch depth for the gate recess is detailed.

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Receipt of papers:

March 13th, 2020

Notification of acceptance:

May 18th, 2020

Registration opening:

May 20th, 2020

Final paper versions:

June 5th, 2020