Design Optimization of a New Nanostructured P-GaN Gate for Normally-off GaN HEMTs

D. Rouly, J. Tasselli, P. Austin, C. Haloui, K. Isoird, F. Morancho (LAAS-CNRS, Toulouse Univ., CNRS, UPS, France)

A new AlGaN/GaN heterostructure is proposed to achieve a normally-off behavior for GaN HEMTs. It relies on multiple P-GaN wells epitaxial regrowth along the gate. Simulation results are presented by focusing on the physical and geometrical parameters of the P-GaN wells. The simulated normally-off behavior of the novel HEMT is demonstrated.